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EPITAXIAL GROWTH OF SILICON
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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Epitaxial growth of silicon on a silicon substrate by hydrogen reduction of SiCl4 was investigated. The chemical and physical processes involved in both the growing and the preceding heat treatment processes were studied and correlated to the experimental results. Epitaxially grown single crystal silicon layers were produced at temperatures between 1100 and 1300 C. The effects of the concentration of SiCl4 in H2, the flow rate of the gas, the temperature and the surface condition of the substrate on the overall performance of the process were investigated. Author
APPROVED FOR PUBLIC RELEASE