Accession Number:

AD0275708

Title:

ENGINEERING SERVICES ON TRANSISTORS

Descriptive Note:

Quarterly progress rept. no. 2, 1 Oct-31 Dec 1961

Corporate Author:

BELL TELEPHONE LABS INC MURRAY HILL NJ

Personal Author(s):

• DAVIS, R. E.
• DODSON, G. A.

Report Date:

1962-03-31

Pagination or Media Count:

94.0

Abstract:

Research continued on microwave germanium transistors and on integrated circuit devices. Expeimental and calculated performance data are given for a low power 3 Gc and 1 watt 1 gc transistor. A review of various approaches to integrated semiconductor circuits leads to the conclusion that most gains will be obtained through a flexible approach using multiple like devices on a common substrate and the common encapsulation of unlike devices on separate substrates. Some aging and reliability results are discussed.

Descriptors:

• *SEMICONDUCTOR DIODES
• *TRANSISTORS
• *MICROWAVE AMPLIFIERS
• HIGH TEMPERATURE
• MICROWAVE EQUIPMENT
• SILICON
• ENCAPSULATION
• CIRCUITS
• LIFE TESTS
• GERMANIUM
• RELIABILITY(ELECTRONICS)
• ULTRAHIGH FREQUENCY
• VERY HIGH FREQUENCY
• MICROWAVE FREQUENCY
• MICROWAVE NETWORKS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE