Accession Number:

AD0274950

Title:

SOME PROPERTIES OF THE SIO2-SI AND SIO-SI SYSTEMS UNDER CONDITIONS OBTAINES DURING DIFFUSION AND EPITAXIAL GROWTH

Descriptive Note:

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON N J

Personal Author(s):

Report Date:

1961-09-15

Pagination or Media Count:

1.0

Abstract:

Efforts were made to determine how the atmospheres under which diffusion and epitaxy are performed affect the SiO2 and SiO films and their silicon substrates. The method is presented for using hot chlorine to produce a window of thin oxide film. Silicon monoxide films were produced on mechanically polished silicon by vacuum evaporization of bulk, degassed SiO. The results are presented of the heat treatment of SiO in hydrogen. Silicon dioxide films were produced by thermal oxidation and by thermal cracking of an ethyl silicate. Both processes are described. The results are presented of the heat treatment of SiO2 in N2 and in H2.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE