Accession Number:

AD0274848

Title:

THE INFLUENCE OF POINT DEFECTS ON THE KINETICS OF DISSOLUTION OF SEMICONDUCTORS

Descriptive Note:

Corporate Author:

YALE UNIV NEW HAVEN CONN HAMMOND LAB

Report Date:

1952-01-15

Pagination or Media Count:

1.0

Abstract:

The kinetics of dissolution of semiconductors as a function of point defects introduced by varying the stoichiometry andor by doping additions have been studied. Experiments on two ionic semiconductors, lead sulfide and zinc oxide, are described. Under conditions involving a relatively large change in the oxidation states of the constituents in the solid-liquid reaction, the kinetics have been shown to vary markedly with point defect concentration. Preliminary results of other investigations under this contract are also mentioned. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE