Accession Number:

AD0274833

Title:

INTERDIGITATED SILICON TRANSISTOR PROGRAM

Descriptive Note:

Corporate Author:

TRW SEMICONDUCTORS INC LAWNDALE CALIF

Personal Author(s):

Report Date:

1962-04-01

Pagination or Media Count:

1.0

Abstract:

Progress in the development of manufacturing methods and processes for the producti n of a amily of power transistors is discussed. Four major areas of effort are described. These are epitaxial collector deposition base and emitter diffusion improvements fabrication of the type 3-20 transistor package design work. Dislocations were found as predicted at the interface of the substrate and the epitaxial layer. Effects of these dislocations may be reduced by deposition of a thick collector region. Resistivity of 39 ohm-cm was obtained in the epitaxial layer using commercial trichlorosilane. Several reactor systems are being tested to choose the most suitable for production. A phosphorus oxychloride emitter diffusion process was tried in the laboratory and is ready for testing in production. An ethyl silicate and propyl borate base predeposition operation is undergoing evaluation. Samples of the type 3-20 transistor design were successfully fabricated in an interim package. Theory, supported by preliminary experiments, indicate the desirability of a package with two emitter leads to minimize lead inductances. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE