Accession Number:

AD0274712

Title:

PHOTOEMISSION STUDIES

Descriptive Note:

Corporate Author:

MINNESOTA UNIV MINNEAPOLIS PHYSICAL ELECTRONICS LAB

Personal Author(s):

Report Date:

1962-03-01

Pagination or Media Count:

1.0

Abstract:

Experimental results having to do with the influence of Na overlayers on the photoelectric emission and work function of Ge and Si crystals are presented. In the case of Ge, a model is presented which leads to a dependence of the photoelectric t re hold on coverage which agrees with the experimental results. The model alsoALLOWS ONE TO CALCULATE THE THRESHOLD VALUE AT WHICH IONIC ADSORPTION TERMINATES, AND AN ANOMALY IN THE EXPERIMENTAL CURVES IS FOUND AT THIS SAME VALUE. For silicon, the simultaneous measurement of the photoelectric threshold and the work function is a valuable technique, allowing inference t be made as to the source of the photoelectrons in the surface region, and the nature and degree of band-bending at the surface. Experimental methods leading to the successful preparation of bulk Na3Sb are described and a glovebox facility required for further exploitation of the technique is described. Progress on a newly-instituted phase of the project, viz., the study of Na3Sb films, is summarized and a new tube, in which control of the film composition may be achieved, is described. A calculation of the potential variation in the surface space-charge region of an intrinsic semiconductor is given. 9author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE