Accession Number:

AD0274516

Title:

RESEARCH INVESTIGATIONS IN THE PHYSICAL CHEMISTRY AND METALLURGY OF SEMICONDUCTING MATERIALS

Descriptive Note:

Corporate Author:

EAGLE-PICHER RESEARCH LAB MIAMI OK

Personal Author(s):

Report Date:

1962-02-15

Pagination or Media Count:

1.0

Abstract:

THE SYNTHESIS AND PURIFICATION STEPS YIELDED A B product with a very small Si content as the only impurity detectable by emission spectrographic analysis. The C content was reduced by employing a 500 C reaction step during the distillation of the BBr3. The C content could be further reduced to a value below the detection limits of the presently employed analysis technique by a selective oxidation reaction while the B is molten. A doping study produced n-type B doped with Si and n-type B doped with W. In each case the dopant required was greater than 4 x 10 to the 20th power atomscc. P-N junctions were produced by a meltback technique by diffusion. Junctions formed by diffusion were obtained by heating the B in the presence of MoO3 at a temperature of 800 C. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE