APPLICATIONS OF TUNNELING TO ACTIVE DIODES
AIR FORCE CAMBRIDGE RESEARCH LABS HANSCOM AFB MA
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Calculated curves are given showing the solubilities of substitutional and interstitial Cu in GaAs in the presence of given amounts of donor and acceptor impurities as a function of temperature. The solubility of Cu was measured in pure and extrinsic p-type GaAs, Ge, and Si, and the results give the solubilities of the substitutional and interstitial species separately. A formula is given for the effective diffusion coefficient in intrinsic and extrinsic n-type semiconductor. Curves giving the intrinsic carrier concentrations at high temperatures in Ge, Si, and various 3-5 compounds are given. An elementary theory of the liquidus curve is 3-5 compound phase diagrams is derived and compared with experiment. New data for GaP solubility in Ga are given which are much lower than that reported elsewhere. The mean free paths of hot electrons in K, Al, and Au as a function of energy are calculated using the theories developed by Wolff and Quinn. Serious discrepancies between these calculations and some recent experimental values are discussed.
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