Accession Number:

AD0274006

Title:

HIGH FREQUENCY TRANSISTOR STUDY

Descriptive Note:

Final rept. 1 Oct 1961-28 Feb 1962

Corporate Author:

HUGHES AIRCRAFT CO NEWPORT BEACH CA

Personal Author(s):

Report Date:

1962-03-16

Pagination or Media Count:

123.0

Abstract:

A 1 gc, coaxially packaged, germanium PNP epitaxial mesa transistor was developed and its electrical properties were evaluated in the frequency range from 200 to 1500 mc. Transit-time mode oscillation was verified around 1. 5 gc in combination with a parametrically pumped down converter at a signal frequency of 750 mc. A coaxial mixer was constructed which will accommodate these coaxially packaged transistors. A stable conversion power gain of approximately 45 db at 750 mc signal and 2 mc intermediate frequency was obtained. The approximate noise figure of 15 db was calculated from a measured sensitivity of 2 microvolt and a ban width of 500 kc. The nonlinear elements in drift transistors, which can be used for frequency conversion, were treated theoretically and verified experimentally. A variable, nonlinear reactance available at the emitter-to-base terminal of a drift transistor was employed for reactive mixing in a parametrically excited mode.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radio Communications

Distribution Statement:

APPROVED FOR PUBLIC RELEASE