HOT CARRIER PHENOMENA IN SEMICONDUCTORS AT MICROWAVE FREQUENCIES
Quarterly rept. no. 3, 15 Nov 1961-15 Feb 1962
GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE LAB
Pagination or Media Count:
An expression is derived for the diffusion constant Di of thermal carriers in the ith valley of a many-valley semiconductor. In n-Ge, intervalley scattering is sufficiently rapid so that the actual diffusion rate depends on the average of the diffusion constant over the valleys, which is a scalar. The same result is obtained for the diffusion constant when a high electric field is applied perpendicular to the concentration gradient, except that the average must be taken over the actual energy distribution of carriers in the high field. At 3 kmc the time variation of the field is slow enough so that the instantaneous D should be equal to D for a dc field of the same magnitude. For measurements of recombination in high electric fields the method of injection was changed from surface illumination to point-contact injection. Data on recombination, conductivity and dielectric constant were obtained for high-frequency fields. Some anomalies are mentioned.
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