Accession Number:

AD0272897

Title:

PRODUCTION ENGINEERING MEASURE ON SILICON HIGH FREQUENCY POWER TRANSISTOR

Descriptive Note:

Corporate Author:

TRANS WORLD AIRLINES INC KANSAS CITY MO

Personal Author(s):

Report Date:

1961-12-31

Pagination or Media Count:

1.0

Abstract:

The failure to introduce back-diffusion into the process with a good yield led to a major change in the process. Work was carried out on the pull-back method of creating a N N junction in silicon which is described. Transistors made from this process have been successful in meeting the Vce sat in general. However as in the back-diffused units other parameters, especially Ico, have suffered. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE