Accession Number:

AD0272822

Title:

STUDY OF LOW CURRENT HIGH GAIN TRANSISTORS

Descriptive Note:

Corporate Author:

NEW BRUNSWICK UNIV FREDERICTON

Personal Author(s):

Report Date:

1961-11-30

Pagination or Media Count:

1.0

Abstract:

Research was initiated on the phenomenon of very high gain observed at very low currents in certain silicon transistors. It was intended to determine, if possible, the reason for this phenomenon, and to study applications of defense interest. Four phases of the project were being carried out to some extent simultaneously. These are measurement of the characteristics of transistors exhibiting very high gain at very low currents, determination of the availability of these transistors, application of these transistors to circuits, and the search for an explanation of the phenomenon. Considerable work was done on the first 2 phases, whereas circuit development was just begun and theoretical studies were restricted by lack of contact with the transistor manufacturer. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE