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RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS
DAVID SARNOFF RESEARCH CENTER PRINCETON N J
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Progress is reported in the preparation and evaluation of large area hot electron emitters of silicon. Diffusion techniques were used to prepare p-n junction emitters with n-regions 500-1000 Angstroms thick. Surface conductance, luminescence, and electron emission were used to evaluate the devices. A correlation was observed between emission and luminescence. However, large emission currents were not observed because of the high electron affinity of these devices. Measurements were made which indicate that argon-bombardment may be useful for producing a favorable surface and for reducing the thickness of the surface n-region. Measurements of the sticking coefficient of cesium on tungsten are reported. Author
APPROVED FOR PUBLIC RELEASE