Accession Number:

AD0272775

Title:

RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS

Descriptive Note:

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON N J

Personal Author(s):

• SIMON,R.E.
• GATCHELL,E.K.

Report Date:

1961-12-31

Pagination or Media Count:

1.0

Abstract:

Progress is reported in the preparation and evaluation of large area hot electron emitters of silicon. Diffusion techniques were used to prepare p-n junction emitters with n-regions 500-1000 Angstroms thick. Surface conductance, luminescence, and electron emission were used to evaluate the devices. A correlation was observed between emission and luminescence. However, large emission currents were not observed because of the high electron affinity of these devices. Measurements were made which indicate that argon-bombardment may be useful for producing a favorable surface and for reducing the thickness of the surface n-region. Measurements of the sticking coefficient of cesium on tungsten are reported. Author

Descriptors:

• *PHOTOELECTRIC EFFECT
• *SEMICONDUCTORS
• *THERMIONIC EMISSION
• ARGON
• CESIUM
• CRYSTAL STRUCTURE
• CRYSTALS
• DIFFUSION
• ELECTRICAL CONDUCTIVITY
• FIELD EMISSION
• LUMINESCENCE
• MEASUREMENT
• PREPARATION
• PROCESSING
• SILICON
• SURFACE PROPERTIES
• SURFACES
• THICKNESS
• TUNGSTEN

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE