Accession Number:

AD0272680

Title:

MICROWAVE SOLID-STATE DEVICES

Descriptive Note:

Corporate Author:

BELL TELEPHONE LABS INC WHIPPANY NJ

Personal Author(s):

Report Date:

1962-02-28

Pagination or Media Count:

1.0

Abstract:

The results of experimental measurements relating to the performanc of diffused gallium arsenide varactor diodes are given. The values of zerobias cutoff frequency are found to be comparable with calculated values for the m asured structure. This fact is taken to indicate essentially n gligible contact resis anc . Th performance data are almost comparable to those obtained for point contact gallium arsenide varactor diodes. Some performa c ata for experimental diffused epitaxial gallium arsenide varactors is al o prese ted. he problem of reproducibility is briefly discussed, and has been te t tively ascribed to poor control of epitaxial film properties. A review of the performance of diffused epitaxial silicon diodes is also given. The noise figure and cutoff frequency data in icated are roughly compar ble to the data quoted for the diffused gallium arsenide diodes. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE