Accession Number:

AD0272624

Title:

FAILURE MECHANISMS IN SILICON SEMICONDUCTORS

Descriptive Note:

Corporate Author:

SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR MOUNTAIN VIEW CALIF

Personal Author(s):

Report Date:

1961-12-31

Pagination or Media Count:

1.0

Abstract:

Investigations of dislocations, small angle grain boundaries, twin boundaries, and stacking faults in Si were continued with the object of determining the influence of these defects upon reliability and failure of Si semiconductor devices. Enhanced grain boundary diffusion of Ga shows marked deviations from theory. SmallANGLE GRAIN BOUNDARIES IN Si yield photo-response with the polarity depending upon the thermal history of the sample. This is in contrast to results in Ge. Oxygen impurity atmospheres around the dislocations apparently determine the photoresponse and the conductivity type of the boundaries. Electrical and diffusion properties at coherent and incoherent twin boundaries may be understood from the crystallographic models of these boundaries. Stacking faults appear to originate preferentially at O contaminated surfaces when used as substrates for epitaxial growth. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE