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DEVELOPMENT OF SILICON POWER TRANSISTORS
Interim development rept. no. 6, 10 Sep-10 Dec 61.
RADIO CORP OF AMERICA SOMERVILLE N J
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Continued emphasis was placed on the importance of defining and solving the negative resistance phenomenon. A new device structure is suggested to minimize the negative resistance effect. Various pulse testing experiments were performed on silicon power transistors to determine the effects on the negative resistance. Efforts wereALSO MADE TO RESOLVE PROCESSING PROBLEMS AND TO IMPROVE THE YIELD OF DEVICES A and B. Diffusion, photoresist masking, metallizating, mounting, and bonding processes were evaluated and improved. State-of-the-art samples of device A were completed, and the electrical parameters of these devices are presented. Author
APPROVED FOR PUBLIC RELEASE