Accession Number:

AD0272277

Title:

MOLECULAR CIRCUIT DEVELOPMENT

Descriptive Note:

Corporate Author:

MELPAR INC FALLS CHURCH VA

Personal Author(s):

Report Date:

1962-02-15

Pagination or Media Count:

74.0

Abstract:

Satisfactory results have been obtained on dielectric films and emphasis is being transferred to semiconductors and active devices. Consistent, pinhole-free, dielectric layers of SiO2 are now obtainable. Work on semiconductor films was largely confined to germanium and efforts resulted in obtaining vacuum-deposited films with field-effect properties approaching the pyrolytic film. This work provided a clue to the field effect in the films. A theoretical model for the field effects found in films became feasible. Studies of crystal structure and grain growth were continued. The phenomena of oriented polycrystals on amorphous substrates were also pursued. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE