Accession Number:
AD0271586
Title:
ETCHING OF HIGH PURITY ZINC
Descriptive Note:
Corporate Author:
CALIFORNIA INST OF TECH PASADENA W M KECK LAB OF ENGINEERING MATERIALS
Personal Author(s):
Report Date:
1961-12-01
Pagination or Media Count:
1.0
Abstract:
An etching technique for revealing dislocations in high purity Zn single crystals without the addition of solute impurities was developed. The technique involves surface doping prior to chemical polishing. Evidence for a one to one correspondence between etch figures and dislocations is presented, together with some preliminary observations of slip on 0001 basal and 1212 pyramidal planes and twinning in Zn. Author