Accession Number:

AD0271586

Title:

ETCHING OF HIGH PURITY ZINC

Descriptive Note:

Corporate Author:

CALIFORNIA INST OF TECH PASADENA W M KECK LAB OF ENGINEERING MATERIALS

Personal Author(s):

• BRANDT,R.C.
• ADAMS,K.H.
• VREELAND,T. JR.

Report Date:

1961-12-01

Pagination or Media Count:

1.0

Abstract:

An etching technique for revealing dislocations in high purity Zn single crystals without the addition of solute impurities was developed. The technique involves surface doping prior to chemical polishing. Evidence for a one to one correspondence between etch figures and dislocations is presented, together with some preliminary observations of slip on 0001 basal and 1212 pyramidal planes and twinning in Zn. Author

Descriptors:

• *SINGLE CRYSTALS
• *ZINC
• CRYSTAL LATTICES
• CRYSTAL STRUCTURE
• DEFORMATION
• ELECTROLYTIC POLISHING
• GROWTH(PHYSIOLOGY)
• METAL CRYSTALS
• MICROSTRUCTURE
• PREPARATION
• PURIFICATION
• SOLUTIONS(MIXTURES)

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE