Accession Number:

AD0270619

Title:

APPLICATION OF TUNNELING TO ACTIVE DIODES

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s):

• HOLONYAK,N. JR.
• JILLSON,D.C.
• BEVACQUA,S.F.

Report Date:

1961-10-30

Pagination or Media Count:

1.0

Abstract:

Gallium arsenide, gallium phosphide, gallium antimonide, and indium phosphide have been transported and deposited, with controlled doping, either as large crystallites when seeded on the walls of the tube, or as epitaxial layers when deposited on seed crystals. Material was transported simultaneously from different compounds and deposited as a ixed compound, e.g. GaAs,P. Compounds were synthesized from the elements and deposited, e.g. GaP. P-n junctions, including low-current-density tunnel junctions, were prepared by the deposition of epitaxial layers. Heterojunctions were formed by deposition of compounds on dissimilar substrates. A discussion of the relationship between trapping and noise effect in GaAs tunnel diodes is presented. Data are presented on a diode in which these properties are measured in the negative resistance region. Author

Descriptors:

• *ANTIMONY ALLOYS
• *ARSENIDES
• *DIODES
• *GALLIUM COMPOUNDS
• *INDIUM COMPOUNDS
• *PHOSPHIDES
• CHLORIDES
• ELECTRICAL CONDUCTIVITY
• EPITAXIAL GROWTH
• GROWTH(PHYSIOLOGY)
• IMPURITIES
• INTERMETALLIC COMPOUNDS
• CRYOGENICS
• METAL COMPOUNDS
• ELECTRICAL RESISTANCE
• TRANSPORT PROPERTIES
• VAPORS

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE