Accession Number:

AD0270134

Title:

INDUSTRIAL PREPAREDNESS STUDY ON SILICON DIFFUSED JUNCTION TRANSISTORS NPN DEVICES 13, 14, 15 AND PNP DEVICES 13 AND 14, VOLUME II, BOOK 1

Descriptive Note:

Final rept., 26 Jun 56-30 Jun 61

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE N J

Personal Author(s):

• SAWYER,F.
• BALENTS,L.

Report Date:

1961-06-30

Pagination or Media Count:

158.0

Abstract:

Devices 13, 14, and 15 are discussed. Silicon power transistors were intended for a wide variety of applications in the temperature range -65 C to 175 C. They are particularly useful in power switching circuits, oscillator, regulator, and pulse amplifier circuits, and as class A and B push-pull audio and servo amplifiers. They feature extremely low saturation resistance, high current and power dissipation ratings, high beta at high current, and excellent high temperature performance up to 175 C. Detailed specifications and manufacturing processes used in the production of these transistors are described. Author

Descriptors:

• *TRANSISTOR AMPLIFIERS
• *TRANSISTORS
• MANUFACTURING
• POWER AMPLIFIERS
• PROCESSING
• PRODUCTION
• SILICON
• TEST METHODS

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE