Investigation of Integrally Composed Variable Energy GaP Photovoltaic Solar Energy Converter
Semiannual technical rept. no. 2, 10 Jul 1691-10 Jan 1962
EAGLE-PICHER RESEARCH LAB MIAMI OK
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Gallium phosphide as a discrete phase has been produced by solid state diffusion of phosphorus into gallium arsenide. High concentrations of gallium phosphide, of the order of 90, have been determined by x-ray analysis. Depths of 50 microns have been obtained. Some knowledge of the conversion process has been obtained, allowing postulation of a step-type conversion mechanism. Tentative data indicates a non-linear diffusion-conversion rate, with rapid rates initially and very slow end rates for a given time of diffusion. The diffusion rate or constant for zinc in gallium phosphide surfaces is observed to be significantly higher than in gallium arsenide by at least an order of magnitude, perhaps two or three orders of magnitude. Two general species or categories have been selected as bracketing the various possible depths, concentrations, and gradients of variable gap cells. They represent very thin gallium phosphide surfaces, 1 to 2 microns deep, and deep 10 microns layers. They are found to exhibit quite dissimilar characteristics, especially in spectral response.
- Electrooptical and Optoelectronic Devices