Accession Number:

AD0270011

Title:

SEMICONDUCTOR RESISTIVE ELEMENT

Descriptive Note:

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Personal Author(s):

Report Date:

1961-10-15

Pagination or Media Count:

1.0

Abstract:

Research concerns the development of a semiconductor resistive lement of low temperatur coefficient of resistance comparable to metal film resistors. An valuation was made of state-ofthe-art semiconductor resistors, such as those incorporated in semiconductor network circuits. Diffused silicon layer el ments and pyrolytically deposited single and polycrystalline silicon elements were evaluated. Indications are that the characteristics of resistive elements can be improved by selection of proper impurity type and concen ration. Au hor

Descriptors:

• *RESISTORS
• *SEMICONDUCTORS
• BORON COMPOUNDS
• GALLIUM COMPOUNDS
• IMPURITIES
• PHOSPHORUS COMPOUNDS
• ELECTRICAL RESISTANCE
• SILICON
• SILICON COMPOUNDS
• TITANIUM COMPOUNDS

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE