Accession Number:

AD0269915

Title:

IMPACT IONIZATION IN ZINC-DOPED GERMANIUM AT LOW TEMPERATURES

Descriptive Note:

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s):

Report Date:

1961-12-01

Pagination or Media Count:

1.0

Abstract:

The behavior of variously compensated Zn-doped Ge samples in large electric fields was studied. By operating in the temperature range that corresponds to a partial freezing out of the charge carriers on the impurity centers, the impact ionization breakdown was observed successively on the 2 acceptor levels of Zn. The most compensated samples exhibited a negative resistance, observable in a wide range of temperatures 78 K to 14 K. The Hall mobility dependence versus the electric field was qualitatively explained by means of the hot c rriers approximation a mechanism for negative resistance is generalized.A-269 9159N1 AD-269 916Div. 19 U TISTWRD OTS price 9.60 Laboratory for Electronics, Inc., Boston, Mass. DOPPLER NAVIGATIONAL SYSTEM RADAR SET ANAPN- 116XY-1 Final rept. 1962, 1v. incl. illus. tables Rept. no. LFE no. C629 Contract AF 3360040261 Unclassified report DESCRIPTORS Doppler navigation, Doppler systems, Doppler radar, Airborne, K band, Reliability, Life expectancy, Radar navigation. Identifiers ANAPN-116, ANAPN-105. Contents General system description K-band microwave development Specific circuit improvements Standardization Mechanical design achievements Reliability program and prediction

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE