FAILURE MECHANISMS IN SILICON SEMICONDUCTORS
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR MOUNTAIN VIEW CALIF
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This report includes STACKING FAULTS IN EPITAXIAL SILICON, by H. J. Queisser, R. H. Finch and J. Washburn. 1961, In cooperation with Lawrence Radiation Lab., U. of California, Berkeley Diffusion studies on small angle grain boundaries in Si were performed with the dopants Ga, In, and Al to investigate the influence of dislocations on the behavior of diffused Si devices. A mathematical treatment of diffusion along isolated dislocations is being explored. The electrical behavior of devices with a small angle boundary was studied. Twin boundaries were investigated an adverse effect upon diode reverse characteristics was found only for incoherent twin boundaries. Defects in epitaxial layers were studied extensively. Slices of less than 1 micron thickness were fabricated the transparency of these slices allows direct observation of defects with optical and electron transmission microscopy. Stacking faults were detected for the first time in Si.