Accession Number:

AD0269292

Title:

HIGH TEMPERATURE SEMICONDUCTOR RESEARCH

Descriptive Note:

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON N J

Personal Author(s):

Report Date:

1961-10-31

Pagination or Media Count:

1.0

Abstract:

A study was made of the cause of explosions in the high pressure magnetic Czochralski apparatus for the growth of GaP. All explosions were ascribed to either a discharge from the R. F. coil, a mechanical failure of quartz members, or an overheating of the P reservoir. The stoichiometric melting point for GaP is 1467 or -10 C at a dissociation pressure of 30 or -10 atm. The gas phase transport of GaAs with I2 was studied by measuring the optical absorption in the vapor no free I2 is present in the system. The heat of reaction was 41 kcalmole Ga1. A study was made of factors affecting the crystallinity of GaAs ingots grown in quartz boats abrasive blasting the boat instead of etching with HF acid, reduces the wetting of the boat by the melt, and results in a markedly improved crystallinity. A Ga rich melt causes increased supercooling and poorer crystallinity. The higher the As pressure, the better is the crystallinity, except that above about 2 atm the crystals are excessively porous. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE