Accession Number:

AD0269216

Title:

HIGH TEMPERATURE DIELECTRIC MATERIALS

Descriptive Note:

Corporate Author:

MCGILL UNIV MONTREAL (QUEBEC) EATON ELECTRONICS RESEARCH LAB

Personal Author(s):

Report Date:

1961-08-31

Pagination or Media Count:

1.0

Abstract:

Techniques were developed and adapted to prepare refractory oxides, particularly single crystals, for dielectric analyses. In particular, methods of sputtering and evaporation were extended to provide heavy noble metal electrodes. The dc resistivity at elevated temperatures of MgO single crystals was increased by the application of dc fields at temperatures from 25 to 560 C the same was true for the ac resistivity. The effect of exposure to high temperatu es alone generally lowered the resistivity. Thin films of Al2O3 formed anodically and heat treated, had good dielectric properties at moderate temperatures. TiO2 films prepared by the pyrolysis of TiCl4 were excellent dielectrics. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE