Accession Number:

AD0266456

Title:

THEORETICAL AND EXPERIMENTAL STUDIES CONCERNING RADIATION DAMAGE IN SELECTED COMPOUND SEMICONDUCTORS

Descriptive Note:

Corporate Author:

BATTELLE MEMORIAL INST COLUMBUS OHIO

Personal Author(s):

Report Date:

1961-11-15

Pagination or Media Count:

1.0

Abstract:

ISOTHERMAL ANNEALING EXPERIMENTS ON NEUTRON-IRRADIATED N-TYPE GaAs were analyzed in terms of two independent monomolecular processes. Since a similar behavior was observed in electron-irradiated GaAs, direct comparisons were made between the two types of damage. Isochronal annealing studies on neutron-irradiated n-type InP indicate that this material may have a more complex direct structure than does GaAs when irradiated at or near room temperature. Opticaltransmission data obtained from neutron-irradiated GaAs, CdT E, AND CdS are discussed in terms of a model in which the damaged sites consist of localized regions of a different phase. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE