Accession Number:

AD0266282

Title:

VAPOR PHASE GROWTH OF SILICON.

Descriptive Note:

Final rept. 1 Aug 60-31 Jul 61,

Corporate Author:

IBM COMMAND CONTROL CENTER FEDERAL SYSTEMS DIV KINGSTON N Y

Personal Author(s):

Report Date:

1961-07-31

Pagination or Media Count:

53.0

Abstract:

A study was made of the growth of silicon single crystalline layers from the vapor phase. The process parameters of 3 chemical systems have been studied and correlated with the characteristics of the growth layers. The limitations of the SiI2 disproportionating reaction were pointed out and showed the advantages of an open-tube type of configuration. The SiI4 - H2 reduction system permitted epitaxial silicon deposits with better crystal perfection and smoother surface topographies than in the closed-tube SiI2 method. The trichlorosilane system was most adapt for a controllable deposition process. The quality and properties of vapor grown silicon films have been found to depend on many process parameters in a complex pattern. Controlled impurity doping with N and P type conductivity was accomplished for a wide resistivity range. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE