Accession Number:

AD0266021

Title:

HIGH-TEMPERATURE BROAD-BAND SEMICONDUCTORS

Descriptive Note:

Corporate Author:

POLYTECHNIC INST OF BROOKLYN N Y

Personal Author(s):

Report Date:

1961-08-16

Pagination or Media Count:

1.0

Abstract:

Efforts were co tinued on the study and development of ne semiconductor materials for the direct conversion of heat to electricity in the temperature range above 800 K. Th major ork was on rare earth sulphid s with the Th3P4 deficiency s ruc ure. uthor

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE