Accession Number:

AD0265745

Title:

DEVELOPMENT OF C-BAND REACTANCE AMPLIFIER

Descriptive Note:

Corporate Author:

AIRBORNE INSTRUMENTS LAB INC MINEOLA N Y

Personal Author(s):

• GREENE,J.C.
• KLIPHUIS,J.
• WHELEHAN,J.J.

Report Date:

1961-08-15

Pagination or Media Count:

1.0

Abstract:

The development and construction of two C-band reactance amplifiers with a gain-bandwidth product greater than 600 Mc and a noise figure of less than 4 db at room temperature is described. Three different varactor diodes were tested in various amplifier configurations at room temperature. An amplifier using a Bell Telephone Laboratory BTL point-contact gallium arsenide diode was tested under cooled conditions and an improvement in the noise figure was observed. It was impossible to obtain the required gain-bandwidth product in a single-diode amplifier without the use of double-tuning techniques. Consequently, the final design was based on a balanced configuration using two Microwave Associates MA silicon-pill diodes in a coaxial structure. Two field test models of this design were delivered, including klystron pump sources, solid-state klystron power supplies, and all the hardware needed to incorporate one amplifier in a radar installation. The gain of both amplifiers was 20 db, and the bandwidth 70 Mc centered at 5280 Mc. The noise figure, including the circulator losses, was less than 4 db for both amplifiers. Author

Descriptors:

• *AMPLIFIERS
• *DIODES
• *MICROWAVE AMPLIFIERS
• *PARAMETRIC AMPLIFIERS
• ARSENIDES
• BROADBAND
• C BAND
• CIRCUITS
• COOLING
• CRYSTAL MIXERS
• GALLIUM COMPOUNDS
• MATHEMATICAL ANALYSIS
• NOISE(RADIO)
• REDUCTION
• SILICON
• SUPERHIGH FREQUENCY

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE