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RESEARCH ON THE BEHAVIOR OF NEARLY PERFECT CRYSTALS
Rept. for 5 Dec 1958-5 Dec 1960
GENERAL ELECTRIC CO SCHENECTADY NY
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Etching techniques have been developed which are capable of producing etch pits at the intersection of dislocation lines with various crystal surfaces of high-purity single crystals of alpha-iron. For the 100 and 110 surfaces, dislocations can be revealed with or without the segregation of a specific impurity to the dislocation sites. Similar etching reagents can be used to reveal dislocations on the 110, 112 and 491 surfaces as well as all surfaces that make an angle of more than 5 degrees with the 100 and 111 planes. The dislocation structure of selected iron whiskers with 100, 110, and 111 growth axes was evaluated using the above etching techniques. There was some qualitative indication that the perfection of the whiskers increases with decrease in whisker diameter and with increase in purity of the halide salt used in their growth.
APPROVED FOR PUBLIC RELEASE