Accession Number:

AD0265164

Title:

TUNNEL DIODES AND TUNNEL JUNCTION DEVICES FOR HIGH FREQUENCY. HIGH POWER OPERATION

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s):

Report Date:

1961-06-30

Pagination or Media Count:

1.0

Abstract:

The development of tunnel diodes for us as scillators capable of mW output at frequencies up to 3 kmc is described. Inestigations on the failure of gallium arsenide units were made with no conclusive result. Experiments with different types of alrt to reduce the junction capacitance in germanium tunnel diodes. A low inductance - low capacitance modified stripline package was developed. The operation of oscillators using high current tunnel diodes above their self resonant frequency is presented. General stability conditions of the tunnel lumped and distributed are discussed. Based on a non-linear analysis of a tunnel diode oscillator, the power generated by the diode, the power dissipated within the diode, and the power delivered to an external load are calculated as a function of frequency and loading conditions. Author

Descriptors:

• *DIODES
• *MICROWAVE OSCILLATORS
• *OSCILLATORS
• ALLOYS
• ARSENIDES
• CAPACITANCE
• CIRCUITS
• FAILURE(MECHANICS)
• GALLIUM COMPOUNDS
• GERMANIUM
• HALL EFFECT
• INDIUM COMPOUNDS
• MEASUREMENT
• MICROWAVE EQUIPMENT
• ELECTRICAL RESISTANCE
• ULTRAHIGH FREQUENCY

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE