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Accession Number:
AD0265147
Title:
THERMOELECTRIC POWER GENERATION AND RELATED PHENOMENA
Descriptive Note:
Corporate Author:
BATTELLE MEMORIAL INST COLUMBUS OH
Report Date:
1961-05-15
Pagination or Media Count:
1.0
Abstract:
Sound, single-phase, solid solutions of the pseudo-binary system GaAs-AlAs were prepared by zone-leveling and solute-buildup techniques. Study of this system has been confined largely to the low Al region. The thermoelectric power of n-type GaAs is increased and the thermal conductivity is decreased by alloying with AlAs. The room-temperature thermoelectric power in material with about 3 x 10 to the 18th power electronscc increased from 63.4 to 176.2 microvoltsdeg C 0 to 22.3 mole- AlAs, whereas the thermal conductivity decreased from 0.39 to 0.15 wcm C. On the other hand, in all cases, alloying has resulted in rather high room-temperature resistivities. A description of both the theory and the apparatus design of the method for measuring thermal diffusivity is given. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE