Accession Number:

AD0265147

Title:

THERMOELECTRIC POWER GENERATION AND RELATED PHENOMENA

Descriptive Note:

Corporate Author:

BATTELLE MEMORIAL INST COLUMBUS OH

Personal Author(s):

• SHILLIDAY, T.S.

Report Date:

1961-05-15

Pagination or Media Count:

1.0

Abstract:

Sound, single-phase, solid solutions of the pseudo-binary system GaAs-AlAs were prepared by zone-leveling and solute-buildup techniques. Study of this system has been confined largely to the low Al region. The thermoelectric power of n-type GaAs is increased and the thermal conductivity is decreased by alloying with AlAs. The room-temperature thermoelectric power in material with about 3 x 10 to the 18th power electronscc increased from 63.4 to 176.2 microvoltsdeg C 0 to 22.3 mole- AlAs, whereas the thermal conductivity decreased from 0.39 to 0.15 wcm C. On the other hand, in all cases, alloying has resulted in rather high room-temperature resistivities. A description of both the theory and the apparatus design of the method for measuring thermal diffusivity is given. Author

Descriptors:

• *THERMAL DIFFUSION
• *INTERMETALLIC COMPOUNDS
• *THERMOELECTRICITY
• MEASUREMENT
• ALUMINUM COMPOUNDS
• PREPARATION
• MATERIALS
• HALL EFFECT
• ARSENIDES
• ELECTRICAL RESISTANCE
• GALLIUM COMPOUNDS
• ANTIMONY ALLOYS
• INDIUM COMPOUNDS
• GERMANIUM
• PHOSPHIDES
• POWER SUPPLIES
• TEST EQUIPMENT
• SEMICONDUCTORS
• ALLOYS
• HEAT TREATMENT

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE