Accession Number:

AD0263967

Title:

THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH

Descriptive Note:

Corporate Author:

TYCO LABS INC WALTHAM MASS

Personal Author(s):

Report Date:

1961-08-17

Pagination or Media Count:

1.0

Abstract:

INITIAL STUDIES WERE MADE OF THE DISSOLUTION RATE OF GaAs in Ga as a function of temperature. Additional experiments were performed to investigate the effect of crystal orientation of the dissolution rate. A small flat disc of polycrystalline GaAs was held by suction onto a ground face of a quartz tube and then immersed in Ga at a series of increasing temperatures. It was established that the amount dissolved at ANY GIVEN TEMPERATURE INCREASED LINEARLY WITH TIME. A marked preferential etching of polycrystalline GaAs by Ga was noted. After etching a single crystal sphere in Ga at 550 C and removing surplus Ga by etching in HCI solution, it was observed that the sphere developed a number of inchoate facets which were not quite flat. A subsequent etch at higher temperature removed all evidence of facet development. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE