Accession Number:

AD0263938

Title:

ELECTRICAL PROPERTIES OF NON-STOICHIOMETRIC SEMICONDUCTORS

Descriptive Note:

Corporate Author:

NATIONAL BUREAU OF STANDARDS WASHINGTON D C

Personal Author(s):

Report Date:

1961-09-01

Pagination or Media Count:

1.0

Abstract:

The electrical conductivity, thermoelectric power, and Hall coefficient are examined as a function of the ratio of hole-to electron concentrations pn for a non-degenerate semiconductor at constant temperature. From these relations the fundamental parameters of the material forbidden band gap, mobilities and effective masses can be derived. This approach is particularly applicable to materials whose stoichiometry varies as a function of temperature and vapor pressure of the constituents, P. For any model of this equilibrium decomposition, it is easy to transform the calculations in terms of pn into results as a function of P. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE