Investigation of Single Energy GaP Solar Cell Material
Summary rept. no. 2, 1 Jan-30 Jun 1961
ARMOUR RESEARCH FOUNDATION CHICAGO IL
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Emphasis was placed on forming p-type layers on n-type zone leveled CdTe by vapor diffusion in the recently acquired multiple zone fabrication furnace. Low temperature diffusion fabrication studies were emphasized and it is shown that shallow and deep junctions can be formed at 500 C. Electrical, thermal and optical studies of the n-type base material, and spectral response curves of the completed solar cells are included. Combined optical transmission and spectral response curves show that the absorption coefficient versus wavelength has a slope similar to silicon rather than to GaAs or InP which is favorable. Low temperature fabrication is shown to be possible and is advanced as an argument for CdTe since less fabrication disorder is expected compared to high temperature fabrication. However, the room temperature conversion efficiencies of current CdTe solar cells are still low compared to silicon, but the still early state of the art of CdTe is stressed. Preliminary high temperature photovoltaic experiments tend to confirm the use of CdTe compared to silicon.
- Electric Power Production and Distribution