Accession Number:

AD0263815

Title:

APPLICATIONS OF TUNNELING TO ACTIVE DIODES

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s):

Report Date:

1961-07-07

Pagination or Media Count:

1.0

Abstract:

Measurements of the temperature and voltage dependence of tunneling in Ge and GaSb are reported which give values for the separation between the 000 and 111 conduction band edges in these semiconductors. Revised values of the longitudinal optical phonon energies in 3-5 and lead salt semiconductors are summarized. Factors which limit the current gain in metal-insulator tunnel triodes are discussed. A considerable body of theoretical and experimental evidence indicates that current gains greater than 0.01 to 0.1 should be difficult to achieve. Further data on the solubility and diffusion of Cu in p-type GaAs are reported. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE