Accession Number:

AD0263155

Title:

STUDY OF SURFACE PROPERTIES OF ATOMICALLY-CLEAN METALS AND SEMICONDUCTORS

Descriptive Note:

Corporate Author:

BARUS RESEARCH LAB OF PHYSICS BROWN UNIV PROVIDENCE R I

Personal Author(s):

Report Date:

1961-08-01

Pagination or Media Count:

1.0

Abstract:

ADSORPTION CHARACTERISTICS OF O on the 111 diamond surface have been investigated. Cleaning the crystal face with aqua regia eliminated the problem of electrical charging of the crystal. Heating the crystal to temperatures up to 1100 C in a pressure of about 0.0001 mm Hg of H has resulted in observation of very intense integral order diffraction beams and very weak halfintegral order beams. This indicates a qualitative similarity between the surface atomic arrangement of cleam diamond and those of Ge and Si. Since observations reported previously have shown no activity for the hydrogen-deuterium exchange reaction at the 100 surfaces of an atomically-clean Ge crystal, tests were made on a sputtered Ge film. The reaction chamber was altered to permit transport and isolation of the film in the ultra high vacuum and thus avoid spurious results from other surfaces. No activity was found for the sputtered film. The sensitivity of the method is evaluated and a comparison of this result with other published results is made. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE