Accession Number:

AD0262693

Title:

MICROWAVE SOLID-STATE DEVICES

Descriptive Note:

Corporate Author:

BELL TELEPHONE LABS INC WHIPPANY NJ

Personal Author(s):

Report Date:

1961-08-30

Pagination or Media Count:

53.0

Abstract:

Development work is reported on both silicon and gallium arsenide varactor diodes using epitaxial semiconductor material. A method is also described for determining varactor diode impedance by means of transmission measurements which appears to have some advantages compared to the reflection coefficient technique. Calculations of predicted performance and some experimental results are given for a double diffused epitaxial silicon varactor diode. Results indicate that the epitaxial structure represents a decided improvement over a heavily doped singly diffused mesa structure. Calculated performance for a zinc diffused epitaxial gallium arsenide varactor structure indicates that it should be superior to the epitaxial silicon structure. Experimental fabrication indicates that the major obstacle to attainment of predicted performance is control of the film resistivity. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE