Accession Number:

AD0262646

Title:

INDUSTRIAL PREPAREDNESS STUDY ON TRANSISTORS. SILCON POWER TRANSISTOR (DEVICE 15)

Descriptive Note:

Corporate Author:

RAYTHEON CO NEWTON MASS

Personal Author(s):

Report Date:

1960-12-31

Pagination or Media Count:

1.0

Abstract:

The development and production of a bulk diffused silicon, NPN, power transistor Device 15 was successfully completed. The bulk diffused approach was adopted because of its ease in providing satisfactory and reproducible transistor characteristics. A major design problem encountered was the base ring contact, which is alloyed through the base. Although the present unit meets the specification, the use of a nonpenetrating type would ensure higher breakdown voltages derived from the diffused collector to base junctions. The processing required for Device 15 and the machinery required for semiautomatic production does not differ materially in principle from the processing and machinery required for silicon alloyed devices. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE