DESIGN CRITERIA FOR STABILIZATION OF TRANSISTOR GAIN WITH TEMPERATURE
HARRY DIAMOND LABS ADELPHI MD
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An equation was developed for a generalized transistor amplifier network, expressing the relationship that must be maintained between circuit elements and the transistor small-signal parameters for minimum gain variations over wide temperature ranges. Employing a single-stage common-emitter amplifier with collector-to-base feedback and various degrees of mismatch relative to the design criteria, the relationship was checked from -50 to 90 C at 10, 100, and 500 kc. Results show that considerable improvement in gain stability can be obtained in going from the unmatched to matched condition, but with some reduction in the over-all gain, the loss being dependent on the relative magnitude of the generator and transistor input impedances. The normalized gain variations were reduced from a maximum of 18 db to less than 2 db over the temperature range.
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