Accession Number:

AD0261970

Title:

MICROWAVE SOLID-STATE DEVICES

Descriptive Note:

Corporate Author:

BELL TELEPHONE LABS INC WHIPPANY N J

Personal Author(s):

Report Date:

1961-05-31

Pagination or Media Count:

1.0

Abstract:

Some considerations pertinent to the problem of designing and properly evaluating varactor diodes for low-noise amplification are discussed. The zero bias cut-off frequency f sub co is used as a figure of merit for electrical performance, since this is a readily measurable number which is related in the first order to performance for the similar types of p-n junction considered. In developing the GaAs varactor, emphasis is being placed on improving the structure, doping profiles, and contacts, with the complications of reduced area assigned for future investigation. A discussion of the factors important in evaluating the relative figures of merit of varactor diodes is given. The various process steps necessary to produce the thin-wafer GaAs structure are reviewed. A symmetrical model for the PIN diode structure has been used to compute approximately the ac impedance for a PIN protector diode in terms of the device parameters. Comparison with experiment indicates only semiquantitative agreement. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE