Accession Number:

AD0261522

Title:

HIGH EFFICIENCY TRANSISTOR STRUCTURES

Descriptive Note:

Corporate Author:

CBS LABS STAMFORD CONN

Personal Author(s):

Report Date:

1961-04-20

Pagination or Media Count:

1.0

Abstract:

Efforts are concerned with providing the military with reliable switching transistors which operate at such low power levels that they reduce the over-all power consumption of computer systems by at least one order of magnitude and allow a much higher packing density of components because of the reduced power dissipation. High efficiency of transistor circuitry at very low power levels is one of the crucial prerequisites for successful systems miniaturization. Based on the knowledge of the behavior of pn-junctions at low current densities and voltages the dc parameters of the transistor and their dependence on geometry, doping and crystal imperfection were derived. The switching speed of the transistor at low power levels is discussed. By controlling the crystal imperfections and pushing the dimensions of the transistor to the utmost limit, switching times of lower than 10 to the -6th power sec at micron watt level are feasible in specially designed switching circuits. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE