HIGH FREQUENCY TRANSISTOR STUDY
Engineering rept. no. 1
HUGHES AIRCRAFT CO NEWPORT BEACH CA
Pagination or Media Count:
A new transistor structure design will be capable of operation at a fundamental frequency above 1,000 MC. Used in conjunction with a coaxial package structure designed for microwave frequencies, the transistor leads can be made sufficiently short to bring the self-resonance of the assembly above the fundamental frequency of oscillation of the transistor. Measurements are reported on present transistors from which the lead inductances of the TO-5 encapsulation are calculated as 3-6nH. Analysis is given which indicates negative resistance oscillation should be possible for a frequency range where alpha has a phase shift between pi and 2 pi radians. Evaluation of present transistors verified the presence of this negative resistance oscillation at 1 - 1.5 KMC.
- Electrical and Electronic Equipment