Accession Number:

AD0261442

Title:

HIGH FREQUENCY TRANSISTOR STUDY

Descriptive Note:

Engineering rept. no. 1

Corporate Author:

HUGHES AIRCRAFT CO NEWPORT BEACH CA

Personal Author(s):

Report Date:

1961-07-28

Pagination or Media Count:

43.0

Abstract:

A new transistor structure design will be capable of operation at a fundamental frequency above 1,000 MC. Used in conjunction with a coaxial package structure designed for microwave frequencies, the transistor leads can be made sufficiently short to bring the self-resonance of the assembly above the fundamental frequency of oscillation of the transistor. Measurements are reported on present transistors from which the lead inductances of the TO-5 encapsulation are calculated as 3-6nH. Analysis is given which indicates negative resistance oscillation should be possible for a frequency range where alpha has a phase shift between pi and 2 pi radians. Evaluation of present transistors verified the presence of this negative resistance oscillation at 1 - 1.5 KMC.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE