CONTRIBUTION OF STACKING FAULTS TO RESISTIVITY IN SILVER
STANFORD UNIV CALIF
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Resistivity measurements were made on small wire specimens of vacuum-melted high-purity Ag and dilute Ag alloys less than 0.05 O2, 0.05 Cu, 0.05 Mg at about 20 C to study the contribution of stacking faults to electron scattering. Values of the stacking fault probability and the increase in resistivity after severe plastic deformation 95 reduction inAREA are tabulated. The data indicate that large changes in stacking fault probability are accompanied by very small differences in resistivity caused by imperfection scattering. Since the imperfection scattering caused by plastic deformation of the alloys was not considerably smaller than that in the pure Ag, it is postulated that stacking faults do not contribute appreciably to the electrical resistivity of Ag deformed at room temperature.