THERMOELECTRIC POWER GENERATION AND RELATED PHENOMENA
BATTELLE MEMORIAL INST COLUMBUS OHIO
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The solute build-up technique crystallization from solution was further evaluated. An ingot of GaAs was prepared to test the technique with newly developed equipment consisting of a 3-zone furnace arrangement. The main furnace provided for well-controlled, linear temperature gradients of the order of 5 to 10 degrees Ccm up to 1200 C. Results indicated that the technique is applicable for the preparation of sound, directionally grown ingots of intermetallics at temperatures far below their melting points and under conditions of relatively low activity of solute. Values of the energy gap were obtained optically for the pseudobinary system GaA -AlAs from 0.0 to 45.0 mol- AlAs. The value varied linearly with AlAs content. High-temperature measurement apparatus designed for the measurement of resistivity, Hall coefficient, and thermoelectric power was successfully operated up to 730 C. Measurements were completed of the thermal diffusivity of InSb up to 500 C using a back-surfacetemperature method.