Accession Number:

AD0260114

Title:

DEVELOPMENT OF DIODE MICROELEMENTS

Descriptive Note:

Corporate Author:

RADIO CORP OF AMERICA CAMDEN N J DEFENSE ELECTRONIC PRODUCTS

Personal Author(s):

Report Date:

1958-03-17

Pagination or Media Count:

1.0

Abstract:

THE TASK OF PREPARING DIODES TO MEET THE OBJECTIVES OF THE MICRO-MODULE PROGRAM WAS CENTERED AROUND FOUR BASIC DIODE TYPES GENERAL-PURPOSE GERMANIUM DIODES F-1, DIFFUSED SILICON COMPUTER DIODES F-2, SILICON JUNCTION ZENER DIODES G, AND SILICON-ALLOY VARIABLE-CAPACITANCE DIODES H. SPECIFICATIONS WERE PREPARED FOR EACH GROUP, DELINEATING THE ELECTRICAL, MECHANICAL AND ENVIORNMENTAL PERFORMANCE REQUIREMENTS NECESSARY FOR A COMPLETE EVALUATION OF THE DIODES. THE F-1 DIODES WERE CONSTRUCTED BY BONDING A FINE GOLD WIRE TO A GERMANIUM PELLET. THE PELLET WAS CLEANED AND THE JUNCTION COATED WITH A PROTECTIVE SILICONE RESIN. THE DEVICE WAS THEN MOUNTED ON THE METALLIZED CERAMIC WAFER AND SOLDERED TO A METAL CAP. FOLLOWING THIS, THE TOP CAP WAS ULTRASONICALLY SEALED, PROVIDING THE SECOND DIODE ELECTRODE. THE DIODE MICROELEMENT WAS THEN TESTED FOR HERMETICITY, AND AGED AND INSPECTED FOR ELECTRICAL AND MECHANICAL PROPERTIES. PROTOTYPE AND FINAL-GRADE F-2, SILICON DIFFUSED DIODES FEATURED A SURFACE PASSIVATION TREATMENT. THE F-2 DIODE PROGRAM WAS COMPLETED SATISFACTORILY. THE F-2 AND GROUP II DIODES WERE PROCESSED FROM SILICON PELLETS. AFTER THE PROCESSES OF BONDING THE BEADS AND BAKING, THE PELLETS WERE SUBJECTED TO SURFACE-PASSIVA TING TREATMENT AND HIGH-TEMPERATURE AGING. THE DIODES WERE THEN MOUNTED ON METALLIZED WAFERS AND THE ELECTRICAL AND MECHANICAL PROPERTIES OF THE DEVICES WERE DETERMINED. THE PREPARATION OF TYPE G REGULATOR DIODES WAS DISCONTINUED

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE