ELECTRON MOBILITY IN CADMIUM SULPHIDE SINGLE CRYSTALS AT LOW TEMPERATURES
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO
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The dependence of electron mobility on temperature for charge carriers in single crystals of CdS was investigated between 4.2 and 273 K. The mobility, mu, was obtained by determining the value of the Hall constant and the crystal resistivity. The crystals were shaped into parallelpipeds and prepared for electrical measurements by applying indium contacts on their surfaces by ultrasonic techniques. Electrical measurements were conducted in a liquid helium cryostat. The mobility, the Hall constant, the resistivity, and the charge carrier density were plotted as a function of 1T. The mobility increased rapidly from 273 K to a maximum near 25 K and then decreased sharply near 4.2 K. Analysis of the data indicated that the experimental behavior of the mobility of charge carriers at low temperatures can be explained in terms of impurity band conduction.