Accession Number:

AD0259038

Title:

RESEARCH PROGRAM ON SEMICONDUCTING COMPOUNDS FOR THERMOELECTRIC POWER GENERATION AT HIGH TEMPERATURES

Descriptive Note:

Corporate Author:

CHRYSLER CORP DETROIT MICH

Personal Author(s):

Report Date:

1961-01-14

Pagination or Media Count:

1.0

Abstract:

Progress in the investigation of semiconducting compounds included the preparation of W, Ta, Hf, and Re compounds. Ta formed compounds with Se, Te, Ge, and Sb. Hf formed compounds with Se, Ge, and Sb. The material resulting from the reaction of Hf and Te gave no x-ray diffraction pattern. The Hf-Bi reaction product showed large acicular crystals on metallographic examination, but the x-ray diffraction pattern of the material gave only lines due to Bi. Re formed compounds with Se, Te, and Ge. ReTe showed evidence of more than 1 phase. ReSe showed a very sharp inflection point in both resistivity and Seebeck coefficient at 70 C. A study is being made of the possibility of spurious effects caused by rectified voltages picked up from nearby radio and television stations.

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE