Accession Number:

AD0258590

Title:

MEASUREMENT OF PHONON SCATTERING IN SILICON

Descriptive Note:

Corporate Author:

SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR MOUNTAIN VIEW CALIF

Personal Author(s):

Report Date:

1961-02-01

Pagination or Media Count:

1.0

Abstract:

The electrical coupling by phonons of 2 isolated layers provides a new method which is used to study the propagation properties of phonons in single crystal silicon at a temperature of 77 K. Measurements are given for phonon scattering by holes, dislocations and oxygen precipitates, with a simple analysis of the results on phononphonon scattering. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE